onsemi PZT751T1G

PZT751T1G onsemi
PZT751T1G
onsemi

Product Information

Minimum DC Current Gain:
40
Transistor Type:
PNP
Dimensions:
6.7 x 3.7 x 1.65mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Base Voltage:
-80 V
Maximum Collector Emitter Voltage:
-60 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-223 (SC-73)
Number of Elements per Chip:
1
Maximum DC Collector Current:
-2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 1A, 2V
edacadModel:
PZT751T1G Models
Frequency - Transition:
75MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/920288
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
24 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223 (TO-261)
Power - Max:
800 mW
Base Product Number:
PZT751
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is PZT751T1G. It features up to 40 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 6.7 x 3.7 x 1.65mm. The product is available in surface mount configuration. Provides up to 800 mw maximum power dissipation. Additionally, it has -80 v maximum collector base voltage. Whereas features a -60 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-223 (sc-73). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -2 a. It has a maximum operating temperature of +150 °c. It contains 3 + tab pins. The product offers single transistor configuration. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. Furthermore, 75 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 75mhz. The 500mv @ 200ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 24 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. sot-223 (to-261) is the supplier device package value. The maximum power of the product is 800 mw. Moreover, it corresponds to pzt751, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet PZT751T1G(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Wire Bond 01/Dec/2010(PCN Design/Specification)
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Datasheet MSL Updated 2/April/2007(PCN Design/Specification)
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PZT751T1(Datasheets)
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Covering Tape/Material Chg 20/May/2016(PCN Packaging)

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