Minimum DC Current Gain:
150
Transistor Type:
NPN
Dimensions:
10.16 x 2.54 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 5V
Frequency - Transition:
3MHz
title:
KSD2012GTU
REACH Status:
REACH Unaffected
edacadModel:
KSD2012GTU Models
edacadModelUrl:
/en/models/1052629
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 2A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
100µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Power - Max:
25 W
Base Product Number:
KSD2012
ECCN:
EAR99
