Minimum DC Current Gain:
200
Transistor Type:
NPN
Dimensions:
10.67 x 9.65 x 4.58mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
80 W
Maximum Collector Emitter Voltage:
100 V
Maximum Emitter Base Voltage:
5 V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Pin Count:
2 + Tab
Transistor Configuration:
Dual
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 3A, 4V
Frequency - Transition:
-
REACH Status:
REACH Unaffected
edacadModel:
FJB102TM Models
edacadModelUrl:
/en/models/1473883
Transistor Type:
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 80mA, 8A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
18 Weeks
Current - Collector Cutoff (Max):
50µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Power - Max:
80 W
Base Product Number:
FJB102
ECCN:
EAR99
