onsemi MJD31C1G NPN Bipolar Transistor, 3 A, 100 V, 4-Pin IPAK

MJD31C1G onsemi  NPN Bipolar Transistor, 3 A, 100 V, 4-Pin IPAK
MJD31C1G
MJD31C1G
onsemi

Product Information

Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
6.73 x 2.38 x 6.22mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Frequency - Transition:
3MHz
title:
MJD31C1G
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
IPAK
Packaging:
Tube
Power - Max:
1.56 W
Base Product Number:
MJD31
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Bipolar Transistor 3 A 100 V 4-Pin IPAK manufactured by onsemi. The manufacturer part number is MJD31C1G. It features up to 10 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 6.73 x 2.38 x 6.22mm. The product is available in through hole configuration. Provides up to 15 w maximum power dissipation. Additionally, it has 100 v dc maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 3 a. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. Furthermore, 10 @ 3a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. In addition, it is reach unaffected. The 1.2v @ 375ma, 3a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 50µa is the maximum current at collector cutoff. ipak is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 1.56 w. Moreover, it corresponds to mjd31, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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Qualification Multiple Devices 24/Sep/2013(PCN Assembly/Origin)
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MJD31 (NPN), MJD32 (PNP)(Datasheets)
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Obsolete Notice 15/Dec/2022(PCN Obsolescence/ EOL)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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You will get a confirmation email regarding your order of onsemi MJD31C1G NPN Bipolar Transistor, 3 A, 100 V, 4-Pin IPAK. You can also check on our website or by contacting our customer support team for further order details on onsemi MJD31C1G NPN Bipolar Transistor, 3 A, 100 V, 4-Pin IPAK.
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