Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
6.73 x 2.38 x 6.22mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Frequency - Transition:
3MHz
title:
MJD31C1G
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
IPAK
Packaging:
Tube
Power - Max:
1.56 W
Base Product Number:
MJD31
ECCN:
EAR99