onsemi 2N6109G PNP Transistor, 7 A, 50 V, 3-Pin TO-220AB

2N6109G onsemi  PNP Transistor, 7 A, 50 V, 3-Pin TO-220AB
2N6109G
2N6109G
ET21479964
onsemi

Product Information

Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
-50 V
Maximum Operating Frequency:
1 MHz
Pin Count:
3
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
-7 A
Maximum Operating Temperature:
+150 °C
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
7 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 2.5A, 4V
edacadModel:
2N6109G Models
Frequency - Transition:
10MHz
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 3A, 7A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/918268
Transistor Type:
PNP
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
40 W
Base Product Number:
2N6109
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Transistor 7 A 50 V 3-Pin TO-220AB manufactured by onsemi. The manufacturer part number is 2N6109G. The transistor is a pnp type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. Additionally, it has 60 v maximum collector base voltage. Whereas features a -50 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It contains 3 pins. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -7 a. It has a maximum operating temperature of +150 °c. The product offers single transistor configuration. The maximum collector current includes 7 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 30 @ 2.5a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 3.5v @ 3a, 7a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 1ma is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 40 w. Moreover, it corresponds to 2n6109, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Bipolar Power Transistor TO220 Pkg Assembly & Test 16/Oct/2015(PCN Assembly/Origin)
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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)
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Mult Dev EOL 7/Jul/2021(PCN Obsolescence/ EOL)
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2N61xx, 2N62xx(Datasheets)

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