onsemi BD13910STU NPN Transistor, 1.5 A, 80 V, 3-Pin TO-126

BD13910STU onsemi  NPN Transistor, 1.5 A, 80 V, 3-Pin TO-126
BD13910STU
BD13910STU
onsemi

Product Information

Minimum DC Current Gain:
63
Transistor Type:
NPN
Dimensions:
8.3 x 3.45 x 11.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
12.5 W
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1.5 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Frequency - Transition:
-
title:
BD13910STU
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126-3
Packaging:
Tube
Power - Max:
1.25 W
Base Product Number:
BD13910
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 1.5 A 80 V 3-Pin TO-126 manufactured by onsemi. The manufacturer part number is BD13910STU. It features up to 63 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 8.3 x 3.45 x 11.2mm. The product is available in through hole configuration. Provides up to 12.5 w maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It features a 5 v of maximum emitter base voltage. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1.5 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 1.5 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 63 @ 150ma, 2v is the minimum DC current gain at given voltage. In addition, it is reach unaffected. The 500mv @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is not applicable. It has a long 10 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. to-126-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 1.25 w. Moreover, it corresponds to bd13910, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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BD135 / 137 / 139, NPN Epitaxial Silicon Transistor Data Sheet(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly Chgs 17/Nov/2020(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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BD135/137/139(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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