Minimum DC Current Gain:
120, 160
Transistor Type:
PNP
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Base Voltage:
-40 V
Maximum Collector Emitter Voltage:
-25 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
-1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1.5 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
25 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 100mA, 1V
Frequency - Transition:
200MHz
REACH Status:
REACH Unaffected
edacadModel:
SS8550CTA Models
edacadModelUrl:
/en/models/1047324
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
500mV @ 80mA, 800mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
1 W
Base Product Number:
SS8550
ECCN:
EAR99
