Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Base Voltage:
160 V
Maximum Collector Emitter Voltage:
140 V
Maximum Operating Frequency:
300 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
140 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 5V
edacadModel:
2N5550TFR Models
Frequency - Transition:
300MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 5mA, 50mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/975300
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
6 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
2N5550
ECCN:
EAR99
