Minimum DC Current Gain:
80
Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Base Voltage:
180 V
Maximum Collector Emitter Voltage:
160 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
160 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
edacadModel:
2N5551TA Models
edacadModelUrl:
/en/models/973959
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
625 mW
Base Product Number:
2N5551
ECCN:
EAR99
