Minimum DC Current Gain:
120, 160
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Base Voltage:
40 V
Maximum Collector Emitter Voltage:
25 V
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1.5 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
25 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 1V
Frequency - Transition:
100MHz
REACH Status:
REACH Unaffected
edacadModel:
SS8050DTA Models
edacadModelUrl:
/en/models/1047325
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
500mV @ 80mA, 800mA
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
1 W
Base Product Number:
SS8050
ECCN:
EAR99
