onsemi KSD1691GSTU NPN Transistor, 5 A, 60 V, 3-Pin TO-126

KSD1691GSTU onsemi  NPN Transistor, 5 A, 60 V, 3-Pin TO-126
KSD1691GSTU
onsemi

Product Information

Minimum DC Current Gain:
160, 200
Transistor Type:
NPN
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
5 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-225AA, TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 1V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
13 Weeks
Current - Collector Cutoff (Max):
10µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-126-3
Power - Max:
1.3 W
Base Product Number:
KSD1691
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 5 A 60 V 3-Pin TO-126 manufactured by onsemi. The manufacturer part number is KSD1691GSTU. It features up to 160, 200 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 8 x 3.25 x 11mm. The product is available in through hole configuration. Provides up to 20 w maximum power dissipation. Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). It features a 7 v of maximum emitter base voltage. The package is a sort of to-126. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 5 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 5 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-225aa, to-126-3. Furthermore, 200 @ 2a, 1v is the minimum DC current gain at given voltage. The 300mv @ 200ma, 2a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 13 weeks standard lead time. In addition, 10µa (icbo) is the maximum current at collector cutoff. to-126-3 is the supplier device package value. The maximum power of the product is 1.3 w. Moreover, it corresponds to ksd1691, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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KSD1691, NPN Epitaxial Silicon Transistor Data Sheet(Technical Reference)
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Mult Dev Assembly/Mold Chg 20/Mar/2019(PCN Assembly/Origin)
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Logo 17/Aug/2017(PCN Design/Specification)
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Multiple Devices 03/Dec/2009(PCN Obsolescence/ EOL)
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KSD1691(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)

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