Minimum DC Current Gain:
100, 250
Transistor Type:
NPN
Dimensions:
3.04 x 2.64 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
32 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
800 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
32 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
edacadModel:
BCW65ALT1G Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1476115
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
9 Weeks
Current - Collector Cutoff (Max):
20nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
225 mW
Base Product Number:
BCW65
ECCN:
EAR99
