onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204

MJ14002G onsemi  NPN Transistor, 60 A, 80 V, 2-Pin TO-204
MJ14002G
MJ14002G
onsemi

Product Information

Minimum DC Current Gain:
15
Transistor Type:
NPN
Dimensions:
38.86 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204
Number of Elements per Chip:
1
Maximum DC Collector Current:
60 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
60 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-65°C ~ 200°C (TJ)
Package / Case:
TO-204AE
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 50A, 3V
edacadModel:
MJ14002G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
3V @ 12A, 60A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919448
Transistor Type:
NPN
Package:
Tray
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
6 Weeks
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-204 (TO-3)
Power - Max:
300 W
Base Product Number:
MJ14002
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 60 A 80 V 2-Pin TO-204 manufactured by onsemi. The manufacturer part number is MJ14002G. It features up to 15 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 38.86 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 300 w maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It features a 5 v of maximum emitter base voltage. The package is a sort of to-204. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 60 a. It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. The maximum collector current includes 60 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -65°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-204ae. Furthermore, 15 @ 50a, 3v is the minimum DC current gain at given voltage. The 3v @ 12a, 60a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tray package . Its typical moisture sensitivity level is not applicable. It has a long 6 weeks standard lead time. In addition, 1ma is the maximum current at collector cutoff. to-204 (to-3) is the supplier device package value. The maximum power of the product is 300 w. Moreover, it corresponds to mj14002, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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MJ14001,2,3(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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You will get a confirmation email regarding your order of onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204. You can also check on our website or by contacting our customer support team for further order details on onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204.
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