Transistor Type:
NPN
Dimensions:
0.93 x 2.92 x 1.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Emitter Voltage:
160 V
Maximum Operating Frequency:
300 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Collector Base Voltage:
180 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MMBT5551
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 350mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
600mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
