Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
400 V
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
300 mA
Maximum Collector Base Voltage:
500 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
41 Weeks
Base Part Number:
KSP44
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 300mA 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
750mV @ 5mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
300mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
