NXP USA Inc. PMDXB1200UPE147

Enrgtech Part No: ET22561935
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Manufacturer Part No:
PMDXB1200UPE147
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Manufacturer: NXP USA Inc.

Product Information

The PMDXB1200UPE147 by NXP USA Inc. is a specialised Field-Effect Transistor (FET) designed for high-efficiency performance and optimised for voltage regulation in power management applications. It is an advanced FET for complex electronics systems with exceptional conductivity and low power dissipation.

FET Feature:

Standard

HTSUS:

8541.21.0095

Vgs(th) (Max) @ Id:

0.95V @ 250µA

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

6-XFDFN Exposed Pad

Gate Charge (Qg) (Max) @ Vgs:

1.2nC @ 4.5V

Rds On (Max) @ Id, Vgs:

1.4Ohm @ 410mA, 4.5V

Current - Continuous Drain (Id) @ 25°C:

410mA (Ta)

Configuration:

2 P-Channel

Package:

Bulk

Drain to Source Voltage (Vdss):

30V

Input Capacitance (Ciss) (Max) @ Vds:

43.2pF @ 15V

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The NXP USA Inc. PMDXB1200UPE147 is a specialised dual P-channel enhancement mode Field-Effect Transistor (FET) that offers enhanced performance and versatility for various electronic applications. With its dual configuration, low on-resistance, high voltage rating, and fast switching speed, this FET is well-suited for power management, motor control, LED lighting, and switching circuits. NXP USA Inc. continues to provide innovative semiconductor solutions, catering to the needs of the ever-evolving electronics industry.

Key Specifications of NXP USA Inc. PMDXB1200UPE147:

The PMDXB1200UPE147 is designed with several notable features and specifications, making it suitable for a wide range of applications. Some key features include:

Dual P-channel Configuration: The device consists of two P-channel FETs in a single package, allowing for increased functionality and flexibility in circuit designs.
Low On-Resistance: The FET offers low on-resistance, reducing power losses and improving efficiency in high-current applications.
High Voltage Rating: The PMDXB1200UPE147 has a high voltage rating, enabling it to handle elevated voltages, making it suitable for applications requiring robustness.
Fast Switching Speed: With its fast switching characteristics, the FET ensures quick response times, making it suitable for high-speed switching applications.

Application Versatility of NXP USA Inc. PMDXB1200UPE147:

The PMDXB1200UPE147 FET is widely employed in various electronic applications due to its performance and versatility. Some typical applications include:

Power Management: The FET is used in power management circuits, such as battery chargers, voltage regulators, and DC-DC converters.
Motor Control: It can be utilised in motor control circuits, offering efficient control and driving capabilities for motors in automotive, industrial, and consumer electronics.
LED Lighting: The FET finds application in LED lighting systems, enabling efficient power control and dimming functionality.
Switching Circuits: Its fast-switching speed and low on-resistance make it ideal for high-speed switching circuits, such as solid-state relays and audio amplifiers.

PMDXB1200UPE(Datasheets)

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