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This is manufactured by Microsemi Corporation. The manufacturer part number is APT11GF120BRDQ1G. Features 65nc gate charge. Td (on/off) value of 7ns/100ns. It features igbt npt 1200v 25a 156w through hole to-247 [b]. The product is available in through hole configuration. The maximum collector current includes 25a. Features 3v @ 15v, 8a. to-247 [b] is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 1200v. In addition, tube is the available packaging type of the product. Provide switching energy up to 300µj (on), 285µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 156w. It carries standard input type. Moreover, the product comes in to-247-3. Features an IGBT npt type. Test condition included 800v, 8a, 10ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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