Maximum Continuous Drain Current:
46 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
SO-8FL
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.6 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
23.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
10.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
6.95mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
9.7 nC @ 4.5 V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NTMFS4C10NT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/5131375
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
750mW (Ta), 23.6W (Tc)
standardLeadTime:
10 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
987 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
8.2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS4
ECCN:
EAR99
