Infineon IPAW60R380CEXKSA1 N-channel MOSFET, 15 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP

IPAW60R380CEXKSA1 Infineon  N-channel MOSFET, 15 A, 600 V CoolMOS CE, 3+Tab-Pin TO-220FP
IPAW60R380CEXKSA1
Infineon

Product Information

Maximum Continuous Drain Current:
15 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Length:
11.3mm
Pin Count:
3 + Tab
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
31 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.27mm
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
0.9V
Maximum Drain Source Resistance:
890 mΩ
RoHs Compliant
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This is N-channel MOSFET 15 A 600 V CoolMOS CE 3+Tab-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IPAW60R380CEXKSA1. While 15 a of maximum continuous drain current. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 32 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 11.3mm. It contains 3 + tab pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 31 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 16.27mm. Whereas, the minimum operating temperature of the product is -40 °c. Its forward diode voltage is 0.9v . It provides up to 890 mω maximum drain source resistance.

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IPAW60R380CE MOSFET 600V CoolMOS CE Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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