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This is manufactured by onsemi. The manufacturer part number is FGA50T65SHD. The maximum collector current includes 100 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Features 2.1v @ 15v, 50a. The maximum collector emitter breakdown voltage of the product is 650 v. Td (on/off) value of 22.4ns/73.6ns. The product has -55°c ~ 175°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 87 nc gate charge. It has a trr (reverse recovery time) of 34.6 ns. In addition, it is reach unaffected. Provide switching energy up to 1.28mj (on), 384µj (off). Test condition included 400v, 50a, 6ohm, 15v. The onsemi's product offers user-desired applications. Its typical moisture sensitivity level is not applicable. Features an IGBT trench field stop type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The product is available in through hole configuration. to-3pn is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 319 w. Moreover, it corresponds to fga50t65, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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