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This is manufactured by Microsemi Power Products Group. The manufacturer part number is APT40GP60B2DQ2G. Features 135nc gate charge. Td (on/off) value of 20ns/64ns. It features igbt pt 600v 100a 543w through hole. The product is available in through hole configuration. The maximum collector current includes 100a. The product power mos 7®, is a highly preferred choice for users. Features 2.7v @ 15v, 40a. The maximum collector emitter breakdown voltage of the product is 600v. In addition, tube is the available packaging type of the product. Provide switching energy up to 385µj (on), 350µj (off). The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 543w. It carries standard input type. Moreover, the product comes in to-247-3 variant. Features an IGBT pt type. Test condition included 400v, 40a, 5ohm, 15v. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . The microsemi power products group's product offers user-desired applications.
Discover our top brands and the latest innovation in supplying electrical and electronic innovative Microsemi Power Products Group APT40GP60B2DQ2G all over the world. Save an amazing 20% on, get exclusive rewards, and exceptional support, and ignite your passion for Transistors - IGBTs - Single. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device such as Microsemi Power Products Group APT40GP60B2DQ2G principally used as an electronic switch that evolved to combine high efficiency and quick switching as it was developed at ET18591775. Purchase from Enrgtech, discount automatically added on most Transistors - IGBTs - Single at cart.
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