Infineon Technologies IPD65R660CFD

IPD65R660CFD Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 200µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
Rds On (Max) @ Id, Vgs:
660mOhm @ 2.1A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Power Dissipation (Max):
62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
615 pF @ 100 V
Mounting Type:
Surface Mount
Series:
CoolMOS™ CFD2
Supplier Device Package:
PG-TO252-3-313
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is IPD65R660CFD. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 200µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 22 nc @ 10 v. It has a maximum Rds On and voltage of 660mohm @ 2.1a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 62.5w (tc). The product's input capacitance at maximum includes 615 pf @ 100 v. The product is available in surface mount configuration. The product coolmos™ cfd2, is a highly preferred choice for users. pg-to252-3-313 is the supplier device package value. The continuous current drain at 25°C is 6a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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