ON Semiconductor FDS6673BZ

FDS6673BZ ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
17 Weeks
Detailed Description:
P-Channel 30V 14.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
FDS66
Gate Charge (Qg) (Max) @ Vgs:
124nC @ 10V
Rds On (Max) @ Id, Vgs:
7.8mOhm @ 14.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
4700pF @ 15V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
14.5A (Ta)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is FDS6673BZ. It has typical 17 weeks of manufacturer standard lead time. It features p-channel 30v 14.5a (ta) 2.5w (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: fds66. The maximum gate charge and given voltages include 124nc @ 10v. It has a maximum Rds On and voltage of 7.8mohm @ 14.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 4700pf @ 15v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 14.5a (ta). The product carries maximum power dissipation 2.5w (ta). This product use mosfet (metal oxide) technology.

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Mult Dev Sourcing Chg 21/Mar/2018(PCN Assembly/Origin)
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FDS6673BZ(Datasheets)
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Mold Compound 12/Dec/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET14519829 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14519829.
Yes. We ship FDS6673BZ Internationally to many countries around the world.