Dimensions:
5 x 6 x 1.05mm
Maximum Continuous Drain Current:
22 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
24 nC @ 10 V, 24 nC @ 8 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1985 pF@ 40 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
69 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
19 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
11.7mOhm @ 10.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2640 pF @ 40 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C:
10.5A (Ta), 22A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
