Category:
Power MOSFET
Dimensions:
5 x 6 x 1.05mm
Maximum Continuous Drain Current:
131 A
Transistor Material:
Si
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
43 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2855 pF @ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
32 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
65 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.7 mΩ
FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
61 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 26A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
2.5W (Ta), 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3800 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 42A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
