NXP USA Inc. PHE13003A126

PHE13003A126 NXP USA Inc.
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.29.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 400mA, 5V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max):
400 V
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
2.1 W
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PHE13003A126. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 10 @ 400ma, 5v is the minimum DC current gain at given voltage. The 1.5v @ 250ma, 750ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 400 v. The transistor is a npn type. It is shipped in bulk package . In addition, 1ma is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 2.1 w. The product is designated with the ear99 code number.

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