NXP USA Inc. PDTB113EU,115

PDTB113EU-115 NXP USA Inc. PDTB113EU,115
NXP USA Inc.

Product Information

Resistor - Base (R1):
1 kOhms
HTSUS:
8541.21.0075
Current - Collector (Ic) (Max):
500 mA
Resistor - Emitter Base (R2):
1 kOhms
Package / Case:
SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 50mA, 5V
Frequency - Transition:
140 MHz
Vce Saturation (Max) @ Ib, Ic:
100mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN - Pre-Biased
Package:
Bulk
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SC-70
Power - Max:
300 mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PDTB113EU,115. Resistor - Base - 1 kohms. It is assigned with possible HTSUS value of 8541.21.0075. The maximum collector current includes 500 ma. Resistor - Emittor Base (R2) - 1 kohms. Moreover, the product comes in sc-70, sot-323. Furthermore, 33 @ 50ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 140 mhz. The 100mv @ 2.5ma, 50ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn - pre-biased type. It is shipped in bulk package . In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. sc-70 is the supplier device package value. The maximum power of the product is 300 mw. The product is designated with the ear99 code number.

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