NXP USA Inc. PBSS5220PAPS115

PBSS5220PAPS115 NXP USA Inc.
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
2A
HTSUS:
8541.21.0095
Operating Temperature:
150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 1A, 2V
Frequency - Transition:
95MHz
Vce Saturation (Max) @ Ib, Ic:
390mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max):
20V
Transistor Type:
2 PNP
Package:
Bulk
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
DFN2020D-6
Power - Max:
370mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PBSS5220PAPS115. The maximum collector current includes 2a. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. Furthermore, 160 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 95mhz. The 390mv @ 200ma, 2a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 20v. The transistor is a 2 pnp type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. dfn2020d-6 is the supplier device package value. The maximum power of the product is 370mw. The product is designated with the ear99 code number.

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PBSS5220PAPS(Datasheets)

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