NXP USA Inc. BAS116QA147

BAS116QA147 NXP USA Inc.
NXP USA Inc.

Product Information

HTSUS:
8541.10.0070
Package / Case:
3-XDFN Exposed Pad
Operating Temperature - Junction:
-55°C ~ 150°C
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
3 µs
Current - Average Rectified (Io):
300mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Package:
Bulk
Voltage - DC Reverse (Vr) (Max):
75 V
Capacitance @ Vr, F:
2pF @ 0V, 1MHz
Qualification:
AEC-Q101
Current - Reverse Leakage @ Vr:
5 nA @ 75 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
DFN1010D-3
Technology:
Standard
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BAS116QA147. It is assigned with possible HTSUS value of 8541.10.0070. Moreover, the product comes in 3-xdfn exposed pad. The product operate at temperatures ranging from -55°c ~ 150°c. It has a robust speed of standard recovery >500ns, > 200ma (io). It has a trr (reverse recovery time) of 3 µs. It features a 300ma of average rectified current. The product has a maximum forward voltage of 1.25 v @ 150 ma. It is shipped in bulk package . While it has maximum reverse voltage of 75 v. Moreover, the product has a 2pf @ 0v, 1mhz capacitance. 5 na @ 75 v is the reverse leakage value of a bespoke product. The product is available in surface mount configuration. The product is automotive, a grade of class. dfn1010d-3 is the supplier device package value. This product use standard technology. The product is designated with the ear99 code number.

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BAS116QA(Datasheets)

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