Maximum Diode Capacitance:
12pF
Dimensions:
10.4 x 4.6 x 16.4mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Maximum Forward Current:
8A
Maximum Forward Voltage Drop:
2.2V
Height:
16.4mm
Width:
4.6mm
Length:
10.4mm
Package Type:
TO-220FPAC
Number of Elements per Chip:
1
Maximum Reverse Voltage:
1200V
Maximum Operating Temperature:
+175 °C
Diode Configuration:
Single
Pin Count:
2
Reverse Recovery Time (trr):
100 ns
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-220-2 Full Pack, Isolated Tab
Operating Temperature - Junction:
175°C (Max)
title:
STTH812FP
REACH Status:
REACH Unaffected
edacadModel:
STTH812FP Models
edacadModelUrl:
/en/models/1426997
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
2.2 V @ 8 A
Voltage - DC Reverse (Vr) (Max):
1200 V
Capacitance @ Vr, F:
-
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
15 Weeks
Current - Reverse Leakage @ Vr:
8 µA @ 1200 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FPAC
Packaging:
Tube
Technology:
Standard
Base Product Number:
STTH812
ECCN:
EAR99
