Taiwan Semi HER108G R0 Switching Diode, 1000V 1A, 2-Pin DO-41

HER108G-R0 Taiwan Semi HER108G R0 Switching Diode, 1000V 1A, 2-Pin DO-41
Taiwan Semiconductor

Product Information

Diameter:
2.7mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
75ns
Peak Non-Repetitive Forward Surge Current:
30A
Maximum Forward Voltage Drop:
1.7V
Maximum Continuous Forward Current:
1A
Rectifier Type:
Switching
Package Type:
DO-41
Number of Elements per Chip:
1
Diode Type:
Rectifier
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
1000V
RoHs Compliant
Checking for live stock

This is Taiwan Semi Switching Diode 1000V 1A 2-Pin DO-41 manufactured by Taiwan Semiconductor. The manufacturer part number is HER108G R0. Its diameter is 2.7mm. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 75ns . Moreover, a bespoke product has 30a peak non-repetitive forward surge current. It features 1.7v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 1a. This switching product is highly suited for various professionals in various settings. The package is a sort of do-41. It consists of 1 elements per chip. It is designed with a rectifier diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 1000v.

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ESD Control Selection Guide V1(Technical Reference)
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HER101G-HER108G Data Sheet(Technical Reference)

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