Taiwan Semi FR307G R0 Switching Diode, 1000V 3A, 500ns, 2-Pin DO-201AD

FR307G-R0 Taiwan Semi FR307G R0 Switching Diode, 1000V 3A, 500ns, 2-Pin DO-201AD
Taiwan Semiconductor

Product Information

Diameter:
5.6mm
Mounting Type:
Through Hole
Diode Technology:
Silicon Junction
Peak Reverse Recovery Time:
500ns
Peak Non-Repetitive Forward Surge Current:
125A
Maximum Forward Voltage Drop:
1.3V
Maximum Continuous Forward Current:
3A
Rectifier Type:
Switching
Package Type:
DO-201AD
Number of Elements per Chip:
1
Diode Type:
Rectifier
Diode Configuration:
Single
Pin Count:
2
Peak Reverse Repetitive Voltage:
1000V
RoHs Compliant
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This is Taiwan Semi Switching Diode 1000V 3A 500ns 2-Pin DO-201AD manufactured by Taiwan Semiconductor. The manufacturer part number is FR307G R0. Its diameter is 5.6mm. The product is available in through hole configuration. The product utilizes silicon junction diode technology. Moreover, it has a peak reverse recovery time about 500ns . Moreover, a bespoke product has 125a peak non-repetitive forward surge current. It features 1.3v of maximum forward voltage drop. Furthermore, its maximum continuous forward current constitutes 3a. This switching product is highly suited for various professionals in various settings. The package is a sort of do-201ad. It consists of 1 elements per chip. It is designed with a rectifier diode. The diode features a single configuration. It contains 2 pins. While having the peak reverse repetitive 1000v.

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ESD Control Selection Guide V1(Technical Reference)
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FR301G - FR307G 3.0 AMPS. Glass Passivated Fast Recovery Rectifiers Data Sheet(Technical Reference)

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