N-Channel 100 V (D-S) MOSFET

SiR510DP-T1-RE3 N-Channel 100 V (D-S) MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0036 Ω
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
126 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel 100 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SiR510DP-T1-RE3. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0036 ω maximum drain source resistance. The package is a sort of powerpak so-8. It consists of 2 elements per chip. While 126 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - SiR510DP-T1-RE3(Technical Reference)

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FAQs

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