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This is N-Channel 100 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SiR510DP-T1-RE3. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0036 ω maximum drain source resistance. The package is a sort of powerpak so-8. It consists of 2 elements per chip. While 126 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.
For more information please check the datasheets.
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