Name: Si2387DS-T1-GE3, Vishay
Brand: Vishay
SKU: ET22535366
Price: 0.084 GBP
Availability: InStock

(0)

Product Information

Maximum Drain Source Voltage:

80 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

TrenchFET

Channel Type:

Maximum Gate Threshold Voltage:

2.5V

Maximum Drain Source Resistance:

11 Ω

Package Type:

SOT-23

Number of Elements per Chip:

Maximum Continuous Drain Current:

3 A

Transistor Material:

Pin Count:

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This is P-Channel -80V SOT-23 manufactured by Vishay. The manufacturer part number is Si2387DS-T1-GE3. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 11 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 2 elements per chip. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

Datasheet - Si2387DS-T1-GE3(Technical Reference)

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You will get a confirmation email regarding your order of P-Channel -80V SOT-23. You can also check on our website or by contacting our customer support team for further order details on P-Channel -80V SOT-23.

P-Channel -80V SOT-23

Si2387DS-T1-GE3

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