Silicon N-Channel MOSFET, 35 A, 650 V, 4-Pin PG-TO247 Infineon IMZA65R057M1HXKSA1

IMZA65R057M1HXKSA1 Silicon N-Channel MOSFET, 35 A, 650 V, 4-Pin PG-TO247 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolSiC
Channel Type:
N
Maximum Gate Threshold Voltage:
5.7V
Maximum Drain Source Resistance:
0.074 Ω
Package Type:
TO-247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
35 A
Transistor Material:
Silicon
Pin Count:
4
RoHs Compliant
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This is Silicon N-Channel MOSFET 35 A 650 V 4-Pin PG-TO247 manufactured by Infineon. The manufacturer part number is IMZA65R057M1HXKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolsic, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.7v of maximum gate threshold voltage. It provides up to 0.074 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.

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Datasheet - IMZA65R057M1HXKSA1(Technical Reference)

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