Dual N-Channel MOSFET Transistor, 236 A, 650 V, 3-Pin PG-TO 247-3 Infineon IPW60R037CSFDXKSA1

IPW60R037CSFDXKSA1 Dual N-Channel MOSFET Transistor, 236 A, 650 V, 3-Pin PG-TO 247-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS CSFD
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
0.037 Ω
Package Type:
TO-247
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
236 A
Pin Count:
3
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor 236 A 650 V 3-Pin PG-TO 247-3 manufactured by Infineon. The manufacturer part number is IPW60R037CSFDXKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos csfd, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.037 ω maximum drain source resistance. The package is a sort of to-247. It consists of 2 elements per chip. While 236 a of maximum continuous drain current. It contains 3 pins.

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Datasheet - IPW60R037CSFDXKSA1(Technical Reference)

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