Dual N-Channel MOSFET Transistor, 23 A, 650 V, 8-Pin PG-HSOF-8 Infineon IPT60R150G7XTMA1

IPT60R150G7XTMA1 Dual N-Channel MOSFET Transistor, 23 A, 650 V, 8-Pin PG-HSOF-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™ C7
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.15 Ω
Package Type:
HSOF-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
23 A
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET Transistor 23 A 650 V 8-Pin PG-HSOF-8 manufactured by Infineon. The manufacturer part number is IPT60R150G7XTMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ c7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.15 ω maximum drain source resistance. The package is a sort of hsof-8. It consists of 1 elements per chip. While 23 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - IPT60R150G7XTMA1(Technical Reference)

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