Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2Pak IRF1010ES Infineon IRF1010ESTRLPBF

Infineon

Product Information

Automotive Standard:
No
Maximum Power Dissipation Pd:
170W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
60V
Channel Mode:
Enhancement
Series:
HEXFET
Forward Voltage Vf:
1.3V
Height:
4.83mm
Typical Gate Charge Qg @ Vgs:
86.6nC
Length:
10.67mm
Package Type:
TO-263
Minimum Operating Temperature:
-55?C
Maximum Drain Source Resistance Rds:
12m?
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
84A
Channel Type:
Type N
Maximum Operating Temperature:
175?C
Pin Count:
3
Mount Type:
Surface
RoHs Compliant
38 - In Stock

Ships in 5-7 business days

Quantity
Unit Price (ex VAT)
Price
10
£ 1.03
£ 10.30
50
£ 0.98
£ 49.00
100
£ 0.94
£ 94.00
Mfr Part No:
IRF1010ESTRLPBF
Seller:
Infineon
Origin:
Warranty:
Manufacturer
Data Code:
ET21632835
Order Today!
From: United Kingdom
Est Ship Date: 05 Jun, 2026
Est Fastest Delivery: 09 Jun, 2026

This is Silicon N-Channel MOSFET 84 A 60 V 3-Pin D2Pak IRF1010ES manufactured by Infineon. The manufacturer part number is IRF1010ESTRLPBF. The product complies with automotive standard - no. mosfet is a versatile product designed to provide user-defined applications. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. In addition, the height is 4.83mm. Its accurate length is 10.67mm. The package is a sort of to-263. Whereas, the minimum operating temperature of the product is -55?c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of 175?c. It contains 3 pins. It has a surface type mount .

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Datasheet - IRF1010ESTRLPBF(Technical Reference)

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