N-Channel MOSFET, 483 A, 100 V, 3-Pin TO 247-3 Infineon IRF100P218XKMA1

IRF100P218XKMA1 N-Channel MOSFET, 483 A, 100 V, 3-Pin TO 247-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
StrongIRFET
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.00128 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
483 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 483 A 100 V 3-Pin TO 247-3 manufactured by Infineon. The manufacturer part number is IRF100P218XKMA1. It has a maximum of 100 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product strongirfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.00128 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 483 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IRF100P218XKMA1(Technical Reference)

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