Silicon MOSFET, 35 A, 60 V, 8-Pin PDFN56 Taiwan Semi TSM220NB06LCR

TSM220NB06LCR Silicon MOSFET, 35 A, 60 V, 8-Pin PDFN56 Taiwan Semi
Taiwan Semiconductor

Product Information

Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
35 A
Channel Mode:
Enhancement
Series:
TSM025
Transistor Material:
Silicon
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
22 mΩ
Package Type:
PDFN56
Pin Count:
8
RoHs Compliant
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This is Silicon MOSFET 35 A 60 V 8-Pin PDFN56 Taiwan Semi manufactured by Taiwan Semiconductor. The manufacturer part number is TSM220NB06LCR. It has a maximum of 60 v drain source voltage. While 35 a of maximum continuous drain current. The product carries enhancement channel mode. The product tsm025, is a highly preferred choice for users. The transistor is manufactured from highly durable silicon material. The product carries 2.5v of maximum gate threshold voltage. It provides up to 22 mω maximum drain source resistance. The package is a sort of pdfn56. It contains 8 pins.

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Datasheet-TSM220NB06LCR(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of Silicon MOSFET, 35 A, 60 V, 8-Pin PDFN56 Taiwan Semi TSM220NB06LCR. You can also check on our website or by contacting our customer support team for further order details on Silicon MOSFET, 35 A, 60 V, 8-Pin PDFN56 Taiwan Semi TSM220NB06LCR.
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