Silicon MOSFET, 107 A, 60 V, 8-Pin PDFN56 Taiwan Semi TSM048NB06LCR

TSM048NB06LCR Silicon MOSFET, 107 A, 60 V, 8-Pin PDFN56 Taiwan Semi
Taiwan Semiconductor

Product Information

Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
107 A
Channel Mode:
Enhancement
Series:
TSM025
Transistor Material:
Silicon
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
4.8 mΩ
Package Type:
PDFN56
Pin Count:
8
RoHs Compliant
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This is Silicon MOSFET 107 A 60 V 8-Pin PDFN56 Taiwan Semi manufactured by Taiwan Semiconductor. The manufacturer part number is TSM048NB06LCR. It has a maximum of 60 v drain source voltage. While 107 a of maximum continuous drain current. The product carries enhancement channel mode. The product tsm025, is a highly preferred choice for users. The transistor is manufactured from highly durable silicon material. The product carries 2.5v of maximum gate threshold voltage. It provides up to 4.8 mω maximum drain source resistance. The package is a sort of pdfn56. It contains 8 pins.

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Datasheet-TSM048NB06LCR(Technical Reference)

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FAQs

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