N-Channel MOSFET, 6 A, 800 V, 3-Pin PG-TO 251-3 Infineon IPS80R900P7AKMA1

IPS80R900P7AKMA1 N-Channel MOSFET, 6 A, 800 V, 3-Pin PG-TO 251-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
800 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS™ P7
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.9 O
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 6 A 800 V 3-Pin PG-TO 251-3 manufactured by Infineon. The manufacturer part number is IPS80R900P7AKMA1. It has a maximum of 800 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.9 o maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 1 elements per chip. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPS80R900P7AKMA1(Technical Reference)

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