N-Channel MOSFET, 9.9 A, 600 V, 3-Pin PG-TO 251 Infineon IPS60R650CEAKMA1

Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS CE
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.65 O
Package Type:
PG-TO 251
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9.9 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 9.9 A 600 V 3-Pin PG-TO 251 manufactured by Infineon. The manufacturer part number is IPS60R650CEAKMA1. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos ce, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.65 o maximum drain source resistance. The package is a sort of pg-to 251. It consists of 1 elements per chip. While 9.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPS60R650CEAKMA1(Technical Reference)

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