N-Channel MOSFET, 8 A, 650 V, 3-Pin PG-TO220 FullPAK Infineon IPA65R190C7XKSA1

IPA65R190C7XKSA1 N-Channel MOSFET, 8 A, 650 V, 3-Pin PG-TO220 FullPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS™ C7
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.19 O
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 8 A 650 V 3-Pin PG-TO220 FullPAK manufactured by Infineon. The manufacturer part number is IPA65R190C7XKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™ c7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.19 o maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPA65R190C7XKSA1(Technical Reference)

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