N-Channel MOSFET, 67.5 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SiR882BDP-T1-RE3

SiR882BDP-T1-RE3 N-Channel MOSFET, 67.5 A, 100 V, 8-Pin PowerPAK SO-8 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
67.5 A
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Gate Threshold Voltage:
1 → 2.3V
Maximum Drain Source Resistance:
0.0069 Ω
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 67.5 A 100 V 8-Pin PowerPAK SO-8 manufactured by Vishay. The manufacturer part number is SiR882BDP-T1-RE3. It has a maximum of 100 v drain source voltage. While 67.5 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 1 → 2.3v of maximum gate threshold voltage. It provides up to 0.0069 ω maximum drain source resistance. The package is a sort of powerpak so-8. It consists of 1 elements per chip. It contains 8 pins.

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Datasheet - SiR882BDP-T1-RE3(Technical Reference)

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