Maximum Drain Source Voltage:
50 V
Typical Gate Charge @ Vgs:
25 nC @ 5 V, 40 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
6.3mm
Width:
2.5mm
Length:
6.8mm
Minimum Gate Threshold Voltage:
1V
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
14 A
Transistor Material:
Si
Maximum Drain Source Resistance:
100 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
100mOhm @ 14A, 5V
title:
RFD14N05L
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
RFD14N05L Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
edacadModelUrl:
/en/models/458750
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
670 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
Supplier Device Package:
IPAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFD14N05
ECCN:
EAR99
