Maximum Continuous Drain Current:
74 A
Width:
5.1mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Dual
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
32 nC @ 10 V
Channel Type:
N
Length:
6.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
3.1 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
8.8 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 10V
Vgs(th) (Max) @ Id:
2V @ 96µA
REACH Status:
REACH Unaffected
edacadModel:
NVMFD6H840NLWFT1G Models
edacadModelUrl:
/en/models/10415224
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2002pF @ 40V
Qualification:
AEC-Q101
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
8-DFN (5x6) Dual Flag (SO8FL-Dual)
Current - Continuous Drain (Id) @ 25°C:
14A (Ta), 74A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVMFD6
ECCN:
EAR99
