Maximum Continuous Drain Current:
235 A
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DFN8 5 x 6
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
91 nC @ 10 V
Channel Type:
N
Length:
6mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
166 W
Maximum Gate Source Voltage:
±20 V
Height:
0.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.3 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
-
Gate Charge (Qg) (Max) @ Vgs:
91 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
-
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6660 pF @ 25 V
standardLeadTime:
8 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-DFN (5x6.15)
Current - Continuous Drain (Id) @ 25°C:
36A (Ta), 235A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFSC1
ECCN:
EAR99
