Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
2.4 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
±12 V
Maximum Gate Threshold Voltage:
1.5V
Height:
0.75mm
Width:
2mm
Length:
2mm
Maximum Drain Source Resistance:
268 mΩ
Package Type:
WDFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.9 A
Minimum Gate Threshold Voltage:
0.4V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
123mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
2.9A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
standardLeadTime:
21 Weeks
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
6-MicroFET (2x2)
Power - Max:
650mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDMA2002
ECCN:
EAR99
