Maximum Drain Source Voltage:
650 V
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
181 W
Maximum Gate Source Voltage:
±30 V
Maximum Gate Threshold Voltage:
4.5V
Channel Type:
N
Width:
8mm
Length:
8mm
Maximum Drain Source Resistance:
125 mΩ
Package Type:
PQFN4
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
24 A
Minimum Gate Threshold Voltage:
2.5V
Forward Diode Voltage:
1.2V
Height:
1.05mm
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Rds On (Max) @ Id, Vgs:
125mOhm @ 12A, 10V
title:
FCMT125N65S3
Vgs(th) (Max) @ Id:
4.5V @ 590µA
REACH Status:
REACH Unaffected
edacadModel:
FCMT125N65S3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9764705
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
181W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1920 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Gate Charge (Qg) (Max) @ Vgs:
49 nC @ 10 V
Supplier Device Package:
4-PQFN (8x8)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
24A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCMT125
ECCN:
EAR99
